STGW40H120DF2 - STMicroelectronics

STGW40H120DF2 Trench gate field-stop IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient a.

Features

 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 VCE(sat) = 2.1 V (typ.) @ IC = 40 A
 5 μs minimum short circuit withstand time at TJ=150 °C
 Safe paralleling
 Very fast recovery antiparallel diode
 Low thermal resistance Figure 1: Internal schematic diagram Applications
 Uninterruptible power supply
 Welding machines
 Photovoltaic inverters
 Power factor correction
 High frequency converters Order code STGW40H120DF2 STGWA40H120DF2 Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop .