STGW40H65FB - STMicroelectronics

STGW40H65FB IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very .

Features

• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A
• Safe paralleling
• Tight parameter distribution
• Low thermal resistance Applications
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any fr.