STGW25M120DF3 - STMicroelectronics

STGW25M120DF3 1200V 25A low-loss M series IGBT

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coeffi.

Features

• Maximum junction temperature: TJ = 175 °C
• 10 μs of short-circuit withstand time
• Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft- and fast-recovery antiparallel diode G(1) C(2, TAB) Applications
• Industrial drives
• UPS
• Solar
• Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency wh.