Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s W.
uous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 600 20 ± 20 40 20 160 150 1.2 -65 to 150 150
Unit V V V A A A W W /o C
o o
C C
(
•) Pulse width limited by safe operating area
June 1999
1/8
STGW20NB60H
THERMAL DATA
R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink Max Max Typ 0.83 30 0.1 C/W oC/W o C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STGW20NB60HD |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 2 | STGW20NB60K |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 3 | STGW20NB60KD |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 4 | STGW20NC60V |
STMicroelectronics |
very fast IGBT |
|
| 5 | STGW20NC60VD |
STMicroelectronics |
very fast IGBT |
|
| 6 | STGW20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT |
|
| 7 | STGW20H65FB |
STMicroelectronics |
IGBT |
|
| 8 | STGW20V60DF |
STMicroelectronics |
600V 20A very high speed trench gate field-stop IGBT |
|
| 9 | STGW20V60F |
STMicroelectronics |
IGBT |
|
| 10 | STGW25H120DF2 |
STMicroelectronics |
Trench gate field-stop IGBT |
|
| 11 | STGW25H120F2 |
STMicroelectronics |
Trench gate field-stop IGBT |
|
| 12 | STGW25M120DF3 |
STMicroelectronics |
1200V 25A low-loss M series IGBT |
|