STGW20H60DF - STMicroelectronics

STGW20H60DF 600V 20A high speed trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easie.

Features

• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode Applications
• Motor control
• UPS, PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operatio.