This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and ver.
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 25 A
• 5 μs minimum short circuit withstand time at TJ = 150 °C
• Safe paralleling
• Low thermal resistance
• Very fast recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGW25H120F2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
2 | STGW25M120DF3 |
STMicroelectronics |
1200V 25A low-loss M series IGBT | |
3 | STGW20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT | |
4 | STGW20H65FB |
STMicroelectronics |
IGBT | |
5 | STGW20NB60H |
ST Microelectronics |
N-CHANNEL IGBT | |
6 | STGW20NB60HD |
ST Microelectronics |
N-CHANNEL IGBT | |
7 | STGW20NB60K |
ST Microelectronics |
N-CHANNEL IGBT | |
8 | STGW20NB60KD |
ST Microelectronics |
N-CHANNEL IGBT | |
9 | STGW20NC60V |
STMicroelectronics |
very fast IGBT | |
10 | STGW20NC60VD |
STMicroelectronics |
very fast IGBT | |
11 | STGW20V60DF |
STMicroelectronics |
600V 20A very high speed trench gate field-stop IGBT | |
12 | STGW20V60F |
STMicroelectronics |
IGBT |