STGW20V60DF - STMicroelectronics

STGW20V60DF 600V 20A very high speed trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight .

Features

• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series 3 2 1 1 3
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2
• Very fast soft recovery antiparallel diode
• Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters Description This device is an IGBT developed using an.