STGD6M65DF2 - STMicroelectronics

STGD6M65DF2 IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the.

Features

• Maximum junction temperature: TJ = 175 °C
• 6 μs of minimum short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 6 A
• Tight parameter distribution
• Safer paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft and very fast-recovery antiparallel diode Applications
• Industrial motor control
• PFC converters, single phase input
• Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an opt.