STGD10NC60K - ST Microelectronics

STGD10NC60K N-CHANNEL IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Internal schematic diagram Applicatio.

Features

Type STGB10NC60K STGP10NC60K STGD10NC60K
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■ VCES 600V 600V 600v VCE(sat)Max @25°C <2.5V <2.5V <2.5V IC @100°C 10A 10A 10A 3 3 1 2 1 D²PAK Lower on voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short circuit withstand time 10µs TO-220 3 1 DPAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high fr.