STGD6NC60H - ST Microelectronics

STGD6NC60H N-CHANNEL IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage.

Features

Type STGD6NC60H
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■ VCES 600V VCE(sat)Max @25°C <2.5V IC @100°C 7A 3 1 Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) High frequency operation DPAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop. Internal schematic diagr.