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STGD6M65DF2 |
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| Part Number | STGD6M65DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system pe... |
| Features |
• Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast-recovery antiparallel diode Applications • Industrial motor control • PFC converters, single phase input • Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an opt... |
| Document |
 STGD6M65DF2 Data Sheet
PDF 885.14KB |
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