This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. Order code STGD10HF60KD Table 1..
• Designed for automotive applications and AEC-Q101 qualified
• Low on-voltage drop (VCE(sat))
• Low Cres / Cies ratio (no cross conduction
susceptibility)
• Switching losses include diode recovery energy
• Short-circuit rated
• Very soft Ultrafast recovery anti-parallel diode
Figure 1. Internal schematic diagram
Applications
• High frequency inverters
• SMPS and PFC in both hard switch and
resonant topologies
• Motor drives
• Injection systems
Description
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGD10NC60H |
STMicroelectronics |
N-channel IGBT | |
2 | STGD10NC60HD |
STMicroelectronics |
very fast IGBT | |
3 | STGD10NC60K |
ST Microelectronics |
N-CHANNEL IGBT | |
4 | STGD10NC60KD |
STMicroelectronics |
600V short-circuit rugged IGBT | |
5 | STGD10NC60KDT4 |
STMicroelectronics |
600V short-circuit rugged IGBT | |
6 | STGD10NC60S |
ST Microelectronics |
Fast IGBT | |
7 | STGD10NC60SD |
ST Microelectronics |
10A - 600V Fast IGBT | |
8 | STGD14NC60K |
ST Microelectronics |
N-CHANNEL IGBT | |
9 | STGD18N40LZ |
STMicroelectronics |
Automotive-grade 390V internally clamped IGBT | |
10 | STGD18N40LZT4 |
STMicroelectronics |
Automotive-grade 390V internally clamped IGBT | |
11 | STGD19N40LZ |
STMicroelectronics |
Automotive-grade 390V internally clamped IGBT | |
12 | STGD20N40LZ |
STMicroelectronics |
Automotive-grade 390V internally clamped IGBT |