STD8NM50N - STMicroelectronics

STD8NM50N N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $4!" ' 3.

Features

TAB Order codes STD8NM50N STP8NM50N STU8NM50N
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■ VDSS@TJMAX RDS(on)max. 550 V < 0.79 Ω ID 1 3 5A TAB DPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 1 TAB 3 2 Applications
■ TO-220 IPAK Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.