This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking D8NM60N D8NM60.
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Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V
RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω
ID
3
3 2 1
1 2
STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N
7A 7A 7 A(1) 7A
IPAK
TO-220
1. Limited only by maximum temperature allowed
■
■
■
3 1
1 3 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
DPAK
TO-220FP
Application
■
Figure 1.
Internal schematic diagram
Switching applications
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD8NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STD8NM60ND |
STMicroelectronics |
Power MOSFET | |
3 | STD8NM60ND |
INCHANGE |
N-Channel MOSFET | |
4 | STD8NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STD8NM50N |
INCHANGE |
N-Channel MOSFET | |
6 | STD8N06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
7 | STD8N10L |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
8 | STD8N60DM2 |
STMicroelectronics |
N-Channel Power MOSFET | |
9 | STD8N65M5 |
ST Microelectronics |
N-Channel Power MOSFET | |
10 | STD8N65M5 |
INCHANGE |
N-Channel MOSFET | |
11 | STD8N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STD8NF25 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |