STD8NM60N - STMicroelectronics

STD8NM60N N-channel Power MOSFET

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking D8NM60N D8NM60.

Features

www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω ID 3 3 2 1 1 2 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed
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■ 3 1 1 3 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Application
■ Figure 1. Internal schematic diagram Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure .