STD8NS25 - ST Microelectronics

STD8NS25 N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY MOSFET

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIG.

Features

Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 8 5 32 80 0.64 5 209
  –65 to 150 150 Unit V V V A A A W W/°C V/ns mJ °C °C (
•)Pulse width limited by safe operating area (1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj ≤TjMAX (2) Starting T j = 25°C, IAR = 50A, V DD=20 V July 2001 1/6 STD8NS25 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Solderi.