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STD8NM50N |
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| Part Number | STD8NM50N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max) ·100% avalanche tested ·Mini... |
| Features |
·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 5 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERI... |
| Document |
 STD8NM50N Data Sheet
PDF 275.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD8NM50N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STD8NM60N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STD8NM60N-1 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STD8NM60ND |
STMicroelectronics |
Power MOSFET |
|
| 5 | STD8NM60ND |
INCHANGE |
N-Channel MOSFET |
|