STD7NM80 - ST Microelectronics

STD7NM80 N-CHANNEL MOSFET

S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process AM01475v1_noZen with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary s.

Features

TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. STD7NM80 800 V 1.05 Ω
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance Applications ID 6.5 A
• Switching applications G(1) Description S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process AM01475v1_noZen with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary .