STD7NM80-1 - STMicroelectronics

STD7NM80-1 N-channel Power MOSFET

AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip tech.

Features

TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK STD7NM80-1 800 V
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance 1.05 Ω 6.5 A Produ D(2, TAB) Applications
• Switching applications solete G(1) t(s) - Ob S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using.