STD7NM50N - STMicroelectronics

STD7NM50N N-channel Power MOSFET

This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters www.DataSheet4U.com Internal schematic diagram.

Features

Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.78Ω <0.78Ω <0.78Ω <0.78Ω ID 1 3 2 5A 1 3 2 IPAK 5A 5A (1) 5A TO-220 1. Limited only by maximum temperature allowed 1 3 3 1 2
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■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Description This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore.