STD7N52K3 - STMicroelectronics

STD7N52K3 N-channel Power MOSFET

The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher mar.

Features

Type STB7N52K3 STD7N52K3 STF7N52K3 STP7N52K3 VDSS 525 V 525 V 525 V 525 V RDS(on) max < 0.98 Ω < 0.98 Ω < 0.98 Ω ID 6.3 A 6.3 A 6.3 A Pw 3 3 90 W 90 W 25 W 90 W 1 1 D²PAK DPAK < 0.98 Ω 6.3 A(1) 1. Limited by package
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■ 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1. 3 3 1 2 TO-220 1 2 TO-220FP Internal schematic diagram Application
■ Switching applications www.DataSheet4U.com Description The new SuperMESH3™ series is obtained through .