STD7NM64N - STMicroelectronics

STD7NM64N N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 $0Y Orde.

Features

TAB 3 1 DPAK Order code STD7NM64N VDS 640 V RDS(on) max. 1.05 Ω ID 5A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance Applications
• Switching applications Figure 1. Internal schematic diagram '7$%
* Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency c.