STD180N4F6 - STMicroelectronics

STD180N4F6 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD180N4F6 Table 1: Device summary Marking Package 180N4F6 DPAK Packing Tape and reel July 2016 DocID028602 Rev 2 This is preliminary information on a.

Features

Order code STD180N4F6 VDS 40 V RDS(on) max. 2.8 mΩ ID 80 A PTOT 130 W
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss Applications
 Switching applications
 Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD180N4F6 Table 1: Device summary Marking Package 180N4F6 DPAK Packing Tape and reel July 2016 DocID028602 Rev 2 This is preliminary information .