STD1855PL - SamHop Microelectronics

STD1855PL P-Channel E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S T U/D1855P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -55V F E AT UR E S ( m W ) Max ID -15A R DS (ON) S uper high dense cell design for low R DS (ON ). 68 @ V G S = -10V 85 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P acka.

Features

mal R esistance, Junction-to-Ambient 1 R JC 1 R JA 3 50 C /W C /W S T U/D1855P L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-10A V GS = -4.5V, ID = -6A V DS = -5V, V GS = -10V V DS = -15V, ID = -10A Min Typ C Max Unit -55 -1 100 -1.3 -1.8 -2.5 50 65 20 12 830 110 65 985 125 75 8 26 68 28 19 9.5 2.6 4.7 68 V uA nA V m-ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Vo.