The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Applications ■ ■ ■ ■ Figure 1. Internal schematic diagram CCFL drivers Voltage regulators Relay drivers High efficiency, low voltage, switching applications Table 1. Device.
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Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4)
3 1
TO-252 DPAK (suffix “T4”)
Description
The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Applications
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■
■
■
Figure 1.
Internal schematic diagram
CCFL drivers Voltage regulators Relay drivers High efficiency, low voltage, switching applications
Table 1.
Device summary
Ma.
·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A) ·DC Current Gain -hFE = 100(Min)@ I.
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