STD1855PLS - SamHop Microelectronics

STD1855PLS P-Channel E nhancement Mode Field Effect Transistor

www.DataSheet4U.com S T U/D1855P LS S amHop Microelectronics C orp. Aug,18 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -55V F E AT UR E S ( m W ) Max ID -15A R DS (ON) S uper high dense cell design for low R DS (ON ). 73 @ V G S = -10V 90 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D .

Features

esistance, Junction-to-Ambient 1 R JC 1 R JA 3 50 C /W C /W S TU/D1855PLS ELECTRICAL CHARACTERISTICS (TA 25 C unless = otherwise noted) Parameter OFF CHARACTERISTICS 5 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b Symbol Condition VGS 0V, ID -250uA VDS -44V, VGS 0V VGS 20V, VDS 0V VDS VGS, ID = -250uA VGS -10V, ID -10A VGS -4.5V, ID -6A VDS = -5V, VGS = -10V VDS -15V, ID -10A Min Typ C Max Unit -55 -1 100 -1.3 -1.6 62 80 V uA nA V m-ohm m-ohm ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS c -2.5 73 90 Drain-S.