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STD180N4F6 |
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| Part Number | STD180N4F6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code... |
| Features |
Order code STD180N4F6
VDS 40 V
RDS(on) max. 2.8 mΩ
ID 80 A
PTOT 130 W
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD180N4F6 Table 1: Device summary Marking Package 180N4F6 DPAK Packing Tape and reel July 2016 DocID028602 Rev 2 This is preliminary information ... |
| Document |
 STD180N4F6 Data Sheet
PDF 630.02KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
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