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These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance a.
Order codes
STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND
VDSS @ TJmax
650 V
RDS(on) max
ID
<0.29 Ω 13 A
• The worldwide best RDS(on)
* area amongst the fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices featur.
STB18NM60ND - INCHANGE
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB18NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB18NM60N |
ST Microelectronics |
Power MOSFET |
|
| 3 | STB18NM80 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STB18N20 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 5 | STB18N55M5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STB18N55M5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | STB18N60DM2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 8 | STB18N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 9 | STB18N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 10 | STB18N65M5 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | STB18N65M5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 12 | STB18NF25 |
ST Microelectronics |
N-Channel MOSFET |
|