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STB18NM60ND |
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| Part Number | STB18NM60ND |
| Manufacturer | INCHANGE |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu... |
| Features |
·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature ... |
| Document |
 STB18NM60ND Data Sheet
PDF 264.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB18NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB18NM60N |
ST Microelectronics |
Power MOSFET |
|
| 3 | STB18NM60ND |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STB18NM80 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | STB18N20 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|