This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driv.
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3 1 D²PAK
Figure 1. Internal schematic diagram
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Order code STB18NF30
VDSS 330 V
RDS(on) max. 180 mΩ
ID 18 A
• Designed for automotive applications and AEC-Q101 qualified
• 100% avalanche tested
• 175 °C junction temperature
Applications
• Switching applications
Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom an.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB18NF25 |
ST Microelectronics |
N-Channel MOSFET | |
2 | STB18N20 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STB18N55M5 |
INCHANGE |
N-Channel MOSFET | |
4 | STB18N55M5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STB18N60DM2 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STB18N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB18N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB18N65M5 |
INCHANGE |
N-Channel MOSFET | |
9 | STB18N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STB18NM60N |
INCHANGE |
N-Channel MOSFET | |
11 | STB18NM60N |
ST Microelectronics |
Power MOSFET | |
12 | STB18NM60ND |
INCHANGE |
N-Channel MOSFET |