STB12NM50T4 - STMicroelectronics

STB12NM50T4 N-CHANNEL MOSFET

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs b.

Features

Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance RDS(on) max. 350 mΩ Applications
• Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, the.