This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STB12N60DM2AG Product summary .
Order code STB12N60DM2AG
VDS @ TJ max. 650 V
RDS(on ) max. 430 mΩ
ID 10 A
• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB12NK80Z |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STB12NK80Z-S |
ST Microelectronics |
N-CHANNEL MOSFET | |
3 | STB12NM50 |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STB12NM50-1 |
ST Microelectronics |
N-CHANNEL MOSFET | |
5 | STB12NM50-1 |
INCHANGE |
N-Channel MOSFET | |
6 | STB12NM50-2 |
INCHANGE |
N-Channel MOSFET | |
7 | STB12NM50FD |
ST Microelectronics |
N-CHANNEL MOSFET with FAST DIODE | |
8 | STB12NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STB12NM50ND |
INCHANGE |
N-Channel MOSFET | |
10 | STB12NM50ND |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STB12NM50T4 |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | STB12NM60N |
STMicroelectronics |
N-channel Power MOSFET |