This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applica.
Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N
■
■
■
VDSS (@Tjmax) 550V 550V 550V 550V
RDS(on) <0.38Ω <0.38Ω <0.38Ω <0.38Ω
ID 11A 11A 11A (1) 11A
3 1
1 3 2
3 1
DPAK
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistancel
D²PAK
3 1 2
TO-220FP
Description
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB12NM50 |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STB12NM50-1 |
ST Microelectronics |
N-CHANNEL MOSFET | |
3 | STB12NM50-1 |
INCHANGE |
N-Channel MOSFET | |
4 | STB12NM50-2 |
INCHANGE |
N-Channel MOSFET | |
5 | STB12NM50FD |
ST Microelectronics |
N-CHANNEL MOSFET with FAST DIODE | |
6 | STB12NM50ND |
INCHANGE |
N-Channel MOSFET | |
7 | STB12NM50ND |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STB12NM50T4 |
STMicroelectronics |
N-CHANNEL MOSFET | |
9 | STB12NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STB12NM60N-1 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STB12N60DM2AG |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STB12NK80Z |
ST Microelectronics |
N-CHANNEL MOSFET |