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STB12NM50T4 |
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| Part Number | STB12NM50T4 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These... |
| Features |
Order codes
VDS
STB12NM50T4
STP12NM50
500 V
STP12NM50FP
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance RDS(on) max. 350 mΩ Applications • Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, the... |
| Document |
 STB12NM50T4 Data Sheet
PDF 619.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB12NM50 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 2 | STB12NM50-1 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 3 | STB12NM50-1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | STB12NM50-2 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STB12NM50FD |
ST Microelectronics |
N-CHANNEL MOSFET with FAST DIODE |
|