STB12NM60N-1 - STMicroelectronics

STB12NM60N-1 N-channel Power MOSFET

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Application ■ Switching application Order cod.

Features

www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω ID 1 3 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 10A 10A 10A(1) 10A 10A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed
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■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’.