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STB12N60DM2AG |
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| Part Number | STB12N60DM2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable f... |
| Features |
Order code STB12N60DM2AG
VDS @ TJ max. 650 V
RDS(on ) max. 430 mΩ
ID 10 A
• AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologi... |
| Document |
 STB12N60DM2AG Data Sheet
PDF 417.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB12NK80Z |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 2 | STB12NK80Z-S |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 3 | STB12NM50 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 4 | STB12NM50-1 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 5 | STB12NM50-1 |
INCHANGE |
N-Channel MOSFET |
|