STB12NK80Z-S - ST Microelectronics

STB12NK80Z-S N-CHANNEL MOSFET

o duThe SuperMESH™ series is obtained through an bs roextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to O Ppushing on-resistance significantly down, special - tecare is taken to ensure a very good dv/dt t(s) lecapability for the most demanding applications. oSuch series complements ST full range of high c svoltage MO.

Features

Type VDSS STB12NK80Z-S 800V RDS(on) <0.75Ω ID Pw 10.5A 190W t(s)
■ Extremely high dv/dt capability c
■ 100% avalanche tested du
■ Gate charge minimized ro
■ Very low intrinsic capacitances lete P ct(s)Description o duThe SuperMESH™ series is obtained through an bs roextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to O Ppushing on-resistance significantly down, special - tecare is taken to ensure a very good dv/dt t(s) lecapability for the most demanding applications. oSuch series complements ST full range of high c svoltage MOSFETs including revoluti.