STB10NK60Z - ST Microelectronics

STB10NK60Z N-CHANNEL POWER MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Internal schematic diagram Applications ■ Switching application Order codes Par.

Features

Type STB10NK60Z-1 STB10NK60Z STP10NK60Z STP10NK60ZFP STW10NK60Z
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■ VDSS @T jMax 650V 650V 650V 650V 650V RDS(on) <0.75Ω <0.75Ω <0.75Ω <0.75Ω <0.75Ω ID 10A 10A 10A 10A 10A Pw 115W 115W 115W 35W 156W 3 1 2 1 2 3 12 TO-247 3 1 TO-262 TO-263 3 Extremely high dv/dt capability 100% Avalanche tested Gate charge minimized Very good manufacturing repeability TO-220FP TO-220 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to.