STB10NC50-1 - ST Microelectronics

STB10NC50-1 N-CHANNEL POWER MOSFET

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.

Features

Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature o o I2PAK D2PAK INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 30 10 6.3 40 135 1.08 3 -65 to 150 150 ( 1) ISD ≤ 10 A, di/dt ≤100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C (
•) Pulse width limited by safe operating area D.