Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
D I DM (
• ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction T emperature
o
INTERNAL SCHEMATIC DIAGRAM
Value 500 500 ± 30 10.6 6.4 42.4 135 1.08 4.5 -65 to 150 150
( 1) ISD ≤ 10.6A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W /o C V/ns
o o
C C
(
•) Pulse width l.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB10NB20 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB10N03 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | STB10N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB10N65K3 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STB10N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STB10NA40 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB10NC50-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB10NK60Z |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB10NK60Z-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STB100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STB100N10F7 |
INCHANGE |
N-Channel MOSFET | |
12 | STB100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |