STB10NA40 - ST Microelectronics

STB10NA40 N-CHANNEL POWER MOSFET

www.DataSheet4U.com STB10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 n n n n n n n n V DSS 400 V R DS(on ) < 0.55 Ω ID 10 A n TYPICAL RDS(on) = 0.46 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPRE.

Features

n Current (continuous) at T c = 100 o C Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating Fact or Storage Temperature Max. O perating Junction Temperature o o Valu e 400 400 ± 30 10 6.3 40 125 1 -65 to 150 150 Unit V V V A A A W W/ oC o o C C (
•) Pulse width limited by safe operating area October 1995 1/10 DataSheet 4 U .com www.DataSheet4U.com STB10NA40 THERMAL DATA R thj -ca se R thj- amb R thc-sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1 62.5 0..