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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB100N10F7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=125℃
Drain Current-Single Pulsed
±20
80 62
320
PD
Total Dissipation @TC=25℃
120
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL C.
STB100N10F7 - STMicroelectronics
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STB100N6F7-2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STB100NF03L-03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STB100NF03L-03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STB100NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 6 | STB100NF04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 7 | STB100NF04L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 8 | STB100NF04T4 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 9 | STB100NH02L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 10 | STB10150C |
SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER |
|
| 11 | STB1017PI |
KODENSHI |
PNP Silicon Transistor |
|
| 12 | STB1045 |
SMC Diode |
SCHOTTKY RECTIFIER |
|