ST2301 - Stanson Technology

ST2301 P Channel Enchancement Mode MOSFET

ST2301 The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power managemen.

Features

ntain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 ww eet www.DataSheet4U.com P Channel Enchancement Mode MOSFET -2.8A ST2301 ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c JA Typical -20 +12 -2.5 -1.5 -10 -1.6 1.25 0..