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The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and othe.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 2 | ST2301 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 3 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
| 4 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 5 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 6 | ST2303SRG |
Stanson Technology |
P-Channel Enhancement Mode MOSFET |
|
| 7 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 8 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 9 | ST2305 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 10 | ST2305A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
| 11 | ST2309ES |
Stanson Technology |
P-Channel Enhancement Mode MOSFET |
|
| 12 | ST230C |
IRF |
PHASE CONTROL THYRISTORS |
|