ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, o.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
2 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
3 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
4 | ST2301 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
5 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET | |
6 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
7 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
8 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
9 | ST2305 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
10 | ST2305A |
Stanson Technology |
P Channel Enhancement Mode MOSFET | |
11 | ST2309ES |
Stanson Technology |
P-Channel Enhancement Mode MOSFET | |
12 | ST230C |
IRF |
PHASE CONTROL THYRISTORS |