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ST2301 |
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| Part Number | ST2301 |
| Manufacturer | Stanson Technology |
| Description | ST2301 The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored... |
| Features |
ntain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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P Channel Enchancement Mode MOSFET -2.8A
ST2301
ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c
JA
Typical -20 +12 -2.5 -1.5 -10 -1.6 1.25 0.... |
| Document |
 ST2301 Data Sheet
PDF 124.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 2 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 3 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
| 4 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 5 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
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