ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, othe.
ORDERING INFORMATION Part Number ST2305AS23RG Package SOT-23-3L Part Marking 05YA
※ Process Code : A ~ Z ; a ~ z ※ ST2305AS23RG S : SOT-23-3L ; R : Tape Reel ; G : Pb
– Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2305A 2005. V1
P Channel Enhancement Mode MOSFET
ST2305A
-3.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ST2305 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
2 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
3 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
4 | ST2301 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
5 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET | |
6 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
7 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
8 | ST2303SRG |
Stanson Technology |
P-Channel Enhancement Mode MOSFET | |
9 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
10 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
11 | ST2309ES |
Stanson Technology |
P-Channel Enhancement Mode MOSFET | |
12 | ST230C |
IRF |
PHASE CONTROL THYRISTORS |