The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP15A can be easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 80.
• High Gain:
– Typically 32 dB gain across 2.4
–2.5 GHz over temperature 0°C to +85°C High linear output power:
– >29 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4
– Meets 802.11g OFDM ACPR requirement up to 25 dBm
– Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal
– Added EVM~3.5% up to 23 dBm for application over 2.3
–2.4 GHz or 2.5
–2.6 GHz WiBro/WiMax frequency bands
– Meets 802.11b ACPR requirement up to 25 dBm High power-added efficiency/Low operating current for both 802.11g/b applications
– ~26%/300 mA @ POUT = 24 dBm for 802.11g
– ~27%/350 mA @ POUT = 25 dBm.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST12LP15 |
SST |
High-Gain Power Amplifier | |
2 | SST12LP15B |
Microchip |
256 QAM Power Amplifier | |
3 | SST12LP10 |
SST |
High-Linearity Power Amplifier | |
4 | SST12LP14 |
SST |
2.4 GHz Power Amplifier | |
5 | SST12LP14A |
SST |
High-Gain Power Amplifier | |
6 | SST12LP14C |
Silicon Storage Technology |
High-Gain Power Amplifier | |
7 | SST12LP17E |
Microchip |
High-Gain Power Amplifier Module | |
8 | SST12LP19E |
Microchip |
High-Efficiency Power Amplifier | |
9 | SST12LP00 |
SST |
Power Amplifier | |
10 | SST12LP07 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
11 | SST12LP07A |
Silicon Storage Technology |
High-Gain Power Amplifier | |
12 | SST12LP08 |
Silicon Storage Technology |
High-Gain Power Amplifier |