The SST12LP00 is a high-power and high-gain power amplifier based on the highly reliable InGaP/GaAs HBT technology. SST12LP00 is easily configured for high-power and high-efficiency applications while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 30 dB gain with better than 50% power added efficiency @ Pout = 23 dBm. The S.
SST12LP002.4 GHz Power Amplifier
APPLICATIONS:
• High Gain:
– Typically 28 dB gain across 2.4
– 2.5 GHz over
temperatures 0
– 85°C
• High linear output power:
– >24 dBm P1dB
• High power-added efficiency/low operating current for Bluetooth applications
– ~50% PAE or 115 mA total current consumption @ Pout = 23 dBm for Vcc = 3.3V and GCTL = 3.0V
• Low idle current
– ~10 mA ICQ
• Simple input/output matching
• Packages available
– 6-contact VQFN and UQFN (3 x 1.6mm2)
• Bluetooth
• USB Dongles
• 2.4 GHz Cordless phones
EOL Data Sheet
PRODUCT DESCRIPTION
The SST12LP00 is a high-power and high.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST12LP07 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
2 | SST12LP07A |
Silicon Storage Technology |
High-Gain Power Amplifier | |
3 | SST12LP08 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
4 | SST12LP10 |
SST |
High-Linearity Power Amplifier | |
5 | SST12LP14 |
SST |
2.4 GHz Power Amplifier | |
6 | SST12LP14A |
SST |
High-Gain Power Amplifier | |
7 | SST12LP14C |
Silicon Storage Technology |
High-Gain Power Amplifier | |
8 | SST12LP15 |
SST |
High-Gain Power Amplifier | |
9 | SST12LP15A |
SST |
High-Power and High-Gain Power Amplifier | |
10 | SST12LP15B |
Microchip |
256 QAM Power Amplifier | |
11 | SST12LP17E |
Microchip |
High-Gain Power Amplifier Module | |
12 | SST12LP19E |
Microchip |
High-Efficiency Power Amplifier |