A Microchip Technology Company 2.4 GHz Power Amplifier SST12LP14 Data Sheet The SST12LP14 is a high-performance power amplifier IC based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 30 dB gain with 22% power added efficiency. The SST.
• High Gain:
– Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C
• High linear output power:
– >26.5 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to 23 dBm
– Added EVM ~4% up to 20 dBm for 54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
• High power-added efficiency/Low operating current for both 802.11g/b applications
– ~22% @ PO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST12LP10 |
SST |
High-Linearity Power Amplifier | |
2 | SST12LP14A |
SST |
High-Gain Power Amplifier | |
3 | SST12LP14C |
Silicon Storage Technology |
High-Gain Power Amplifier | |
4 | SST12LP15 |
SST |
High-Gain Power Amplifier | |
5 | SST12LP15A |
SST |
High-Power and High-Gain Power Amplifier | |
6 | SST12LP15B |
Microchip |
256 QAM Power Amplifier | |
7 | SST12LP17E |
Microchip |
High-Gain Power Amplifier Module | |
8 | SST12LP19E |
Microchip |
High-Efficiency Power Amplifier | |
9 | SST12LP00 |
SST |
Power Amplifier | |
10 | SST12LP07 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
11 | SST12LP07A |
Silicon Storage Technology |
High-Gain Power Amplifier | |
12 | SST12LP08 |
Silicon Storage Technology |
High-Gain Power Amplifier |